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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/4824
Title: Nanometer-sized carbon coatings on a silicon wafer: the effect that nitrogen doping level has on specific conductivity and morphology
Authors: Kolpakov, A. Ya.
Sudzhanskaya, I. V.
Galkina, M. E.
Goncharov, I. Yu.
Poplavskii, A. I.
Manokhin, S. S.
Keywords: chemistry
chemical technology
nitrogen-doped carbon
single-crystal silicon wafers
vacuum-arc technique
Issue Date: 2011
Citation: Nanometer-sized carbon coatings on a silicon wafer: the effect that nitrogen doping level has on specific conductivity and morphology / A.Ya. Kolpakov, I.V. Sudzhanskaya, M.E. Galkina et al. ; Belgorod State University // Nanotechnologies in Russia. - 2011. - Vol.6, N3–4.-P. 185–188. - doi: 10.1134/S199507801102011X.
Abstract: The dependences that the specific conductivity has on nitrogen pressure and thickness show nonlinear behavior; correlations between the coating morphology, specific conductivity, and plasmon energy are revealed. An explanation for the results is proposed
URI: http://dspace.bsu.edu.ru/handle/123456789/4824
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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