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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/4824
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dc.contributor.authorKolpakov, A. Ya.-
dc.contributor.authorSudzhanskaya, I. V.-
dc.contributor.authorGalkina, M. E.-
dc.contributor.authorGoncharov, I. Yu.-
dc.contributor.authorPoplavskii, A. I.-
dc.contributor.authorManokhin, S. S.-
dc.date.accessioned2013-05-24T10:04:27Z-
dc.date.available2013-05-24T10:04:27Z-
dc.date.issued2011-
dc.identifier.citationNanometer-sized carbon coatings on a silicon wafer: the effect that nitrogen doping level has on specific conductivity and morphology / A.Ya. Kolpakov, I.V. Sudzhanskaya, M.E. Galkina et al. ; Belgorod State University // Nanotechnologies in Russia. - 2011. - Vol.6, N3–4.-P. 185–188. - doi: 10.1134/S199507801102011X.ru
dc.identifier.otherdoi: 10.1134/S199507801102011X-
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/4824-
dc.description.abstractThe dependences that the specific conductivity has on nitrogen pressure and thickness show nonlinear behavior; correlations between the coating morphology, specific conductivity, and plasmon energy are revealed. An explanation for the results is proposedru
dc.language.isoenru
dc.subjectchemistryru
dc.subjectchemical technologyru
dc.subjectnitrogen-doped carbonru
dc.subjectsingle-crystal silicon wafersru
dc.subjectvacuum-arc techniqueru
dc.titleNanometer-sized carbon coatings on a silicon wafer: the effect that nitrogen doping level has on specific conductivity and morphologyru
dc.typeArticleru
dc.identifier.citationpublicationNanotechnologies in Russiaru
dc.identifier.citationnumber3-4ru
dc.identifier.citationvolume6ru
dc.identifier.citationfirstpage185ru
dc.identifier.citationendpage188ru
dc.description.refereedyesru
dc.description.institutionBelgorod State Universityru
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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