http://dspace.bsu.edu.ru/handle/123456789/4326| Title: | Mechanisms of hopping conductivity in weakly doped La₁₋ₓВaₓMnO₃ |
| Authors: | Laiho R. Lisunov K.G. Shakhov M.A. Zakhvalinskii V.S. Stamov V.N. Lahderanta E. Patrakeev M.V. |
| Keywords: | physics physics of the solid state sresistance of materials hopping conductivity paramagnetic transition ferromagnetic transition magnetization measurements |
| Issue Date: | 2005 |
| Citation: | Mechanisms of hopping conductivity in weakly doped La₁₋ₓВaₓMnO₃=Механизм прыжковой проводимости в слабо легированных La₁₋ₓBaₓMnO₃ / R. Laiho, K.G. Lisunov,... V.S Zakhvalinskii et al. // Journal of physics: condensed matter. Special section on semiconductor - oxide interfaces in microelectronic devices. - 2005. - Vol.17, N21.-P. 3429-3444. - doi:10.1088/0953-8984/17/21/033 |
| Abstract: | The localization radius of the charge carriers, a, has different constant values within the temperature intervals where δ(T) ~ T½. With further decrease of T, a increases according to the law expected for small lattice polarons |
| URI: | http://dspace.bsu.edu.ru/handle/123456789/4326 |
| Appears in Collections: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages) |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Mechanisms of hopping.pdf | 476.8 kB | Adobe PDF | View/Open |
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