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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/62921
Title: Simulating quantum states of positively charged particles channeling along the [111] direction in a silicon crystal
Authors: Syshchenko, V. V.
Tarnovsky, A. I.
ParakhinIsupov, A. S.
Isupov, A. Yu.
Keywords: physics
solid state physics
channeling
silicon
numerical simulation
spectral method
hexagonal grid
quantum chaos
Issue Date: 2024
Citation: Simulating quantum states of positively charged particles channeling along the [111] direction in a silicon crystal / V.V. Syshchenko, A.I. Tarnovsky, A.S. Parakhin, Isupov A.Yu. // Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. - 2024. - Vol.18, №2.-P. 274-280.
Abstract: The potential well formed by the repulsive continuous potentials of three neighboring [111] chains in a silicon crystal, for a positively charged particle, exhibits the symmetry of an equilateral triangle, described by the group
URI: http://dspace.bsu.edu.ru/handle/123456789/62921
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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