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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/5453
Title: Magnetoresistance of (Zn₁₋xMnx)₃As₂ in region of hopping conductivity
Authors: Laiho, R.
Lisunov, K.
Zahvalinsky, V.
Keywords: physics
solid state physics
magnetoresistance
hopping conductivity
semimagnetic semiconductors
magnetic properties
Issue Date: 1995
Citation: Laiho, R. Magnetoresistance of (Zn₁₋xMnx)₃As₂ in region of hopping conductivity / R. Laiho, K. Lisunov, ... V. Zahvalinsky // Journal of magnetism and magnetic materials. - 1995. - Vol.140-144, pt.3.-P. 2021-2022. - doi: 10.1016/0304-8853(94)00711-X
Abstract: Magnetoresistance (MR) of (Zn1-xMnx)3As2 (0 ≤ x ≤ 0.13) is measured at 4 < T < 20 K. In applied fields < 1 T positive MR is observed for all compositions investigated. Above 1 T it is negative. The positive contribution is attributed to shift of the mobility threshold, and the negative one to suppression of the underbarrier spin-flip scattering of holes in the magnetic field
URI: http://dspace.bsu.edu.ru/handle/123456789/5453
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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