Statistical properties of the transverse-motion energy levels for channeling electrons in a silicon crystal under dynamical chaos conditions

Abstract

This paper studies the calculated energy levels of the transverse motion of relativistic electrons in the axial-channeling regime along the [100] direction of the silicon crystal which is described as motion in the smooth potential well. The nearest-level spacing distributions as well as the spectral rigidity are studied for the range of parameters where electron motion is chaotic within the classical limit. Both these characteristics demonstrate agreement with quantum-chaos-theory predictions