| DC Field | Value | Language |
|---|
| dc.contributor.author | Kucheev, S. I. | - |
| dc.date.accessioned | 2013-04-17T07:23:39Z | - |
| dc.date.available | 2013-04-17T07:23:39Z | - |
| dc.date.issued | 2008 | - |
| dc.identifier.citation | Kucheev, S.I . Transient current in nematic cells containing a silicon substrate / S.I. Kucheev ; Belgorod State University // Journal of physics: condensed matter. - 2008. - Vol.20, N27.- P. 1-4. - Doi: 10.1088/0953-8984/20/27/275222 | ru |
| dc.identifier.other | Doi: 10.1088/0953-8984/20/27/275222 | - |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/4399 | - |
| dc.description.abstract | Transient currents induced by step voltage or polarity reversal of voltage applied to a liquid crystal cell containing a silicon substrate have been investigated. It is shown that the curves of transient current reveal a minimum for negative polarity of dc voltage relative to a silicon substrate of p-type conductivity | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | solid state physics | ru |
| dc.subject | transient current | ru |
| dc.subject | silicon substrate | ru |
| dc.title | Transient current in nematic cells containing a silicon substrate | ru |
| dc.type | Article | ru |
| dc.identifier.citationpublication | Journal of physics: condensed matter | ru |
| dc.identifier.citationnumber | 20 | ru |
| dc.identifier.citationvolume | 27 | ru |
| dc.identifier.citationfirstpage | 1 | ru |
| dc.identifier.citationendpage | 4 | ru |
| dc.description.refereed | yes | ru |
| dc.description.institution | Belgorod State University | ru |
| Appears in Collections: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
|
