Hopping conduction in single crystals of the diluted magnetic semiconductor (Zn₁₋ₓFeₓ)₃As₂ (x=0.005)

Abstract

Single crystals of the diluted magnetic semiconductor (Zn₁₋ₓFeₓ)₃As₂ (x = 0.005) were obtained by modified Bridgman method. According to the results of the X-ray powder diffractometry, the material was single-phased and isomorphic and corresponded to the pure Zn₃As₂ (x = 0.0). The research of the electroconductivity and the magnetoresistance was carried out at the temperature range from 10 to 300 К. It was found out that the electroconductivity in the temperature range 11 ÷ 19 К corresponded to the mechanism of the Mott type variable-range hopping conductivity. The microparameters, characterizing electroconductivity (Zn₁₋ₓFeₓ)₃As₂ (x = 0.005) at the temperature range of 11 ÷ 19 К, were defined