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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/41611
Title: Hopping Conductivity Mechanism in Cd₃As₂ Films Prepared by Magnetron Sputtering
Authors: Zakhvalinskii, V. S.
Pilyuk, E. A.
Nikulicheva, T. B.
Ivanchikhin, S. V.
Yaprintsev, M. N.
Goncharov, I. Yu.
Kolesnikov, D. A.
Morocho, A. A.
Keywords: physics
solid state physics
cadmium arsenide
Dirac semimetals
thin films
hopping conductivity
Issue Date: 2020
Citation: Hopping Conductivity Mechanism in Cd₃As₂ Films Prepared by Magnetron Sputtering / V.S. Zakhvalinskii [et al.] // Journal of Nano- and Electronic Physics. - 2020. - Vol.12, №3.-Art. 03029. - Doi: 10.21272/jnep.12(3).03029. - URL: https://jnep.sumdu.edu.ua/download/numbers/2020/3/articles/jnep_12_3_03029.pdf
Abstract: Cadmium arsenide films on oxidized silicon substrates were obtained by RF magnetron sputtering. The structure and morphology of the surface were studied by atomic force microscopy (AFM) and Raman spectroscopy
URI: http://dspace.bsu.edu.ru/handle/123456789/41611
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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