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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/1945
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dc.contributor.authorAndreyeva, N. V.-
dc.contributor.authorVirchenko, Yu. P.-
dc.date.accessioned2012-04-19T09:28:55Z-
dc.date.available2012-04-19T09:28:55Z-
dc.date.issued2004-
dc.identifier.citationAndreyeva, N.V. Stabilization of thermal breakdown development in semiconductor films / N.V. Andreyeva1, Yu.P. Virchenko ; BSU // Problems of atomic science and technology. Ser. Nuclear Physics Investigations. - 2004. - №5.-P. 126-128.ru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/1945-
dc.description.abstractThe analysis of fixed points of the evolution equation for temperature in thermal fluctuation area in semiconductor film is done. It is shown that there exists a stable fixed point being more than the threshold of the breakdown regime developmentru
dc.language.isoenru
dc.subjectscienceru
dc.subjectphysicsru
dc.subjectsemiconductor filmsru
dc.subjectthermal breakdownru
dc.subjectevolution equationru
dc.titleStabilization of thermal breakdown development in semiconductor filmsru
dc.typeArticleru
dc.identifier.citationpublicationProblems of atomic science and technology. Ser. Nuclear Physics Investigationsru
dc.identifier.citationnumber5ru
dc.identifier.citationfirstpage126ru
dc.identifier.citationendpage128ru
dc.description.refereedyesru
dc.description.institutionBSUru
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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