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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/15686
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dc.contributor.authorZakhvalinskii, V. S.-
dc.contributor.authorGoncharov, I. Yu.-
dc.contributor.authorKudryavtsev, E. A.-
dc.contributor.authorPiluk, E. A.-
dc.contributor.authorKolesnikov, D. A.-
dc.date.accessioned2016-04-21T07:49:27Z-
dc.date.available2016-04-21T07:49:27Z-
dc.date.issued2014-
dc.identifier.citationRF-Magnetron sputtering of Si3N4 and study of Si3N4/p-Si heterostructures / V. S. Zakhvalinskii [и др.] // Journal of Nanoelectronics and Optoelectronics. - 2014. - Vol.9, №4.-P. 570-575. - doi: http://dx.doi.org/10.1166/jno.2014.1627.ru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/15686-
dc.description.abstractHere we report the feasibility of using cheap and environmentally friendly RF-magnetron sputtering of Si3N4 and formation of Si3N4 nanostructured films with developed surface. p-Si(100) polished plates commonly used in photovoltaic structures were chosen as a substrate. Si3N4 film surface morphology was studied using atomic force microscopyru
dc.language.isoenru
dc.subjectphysicsru
dc.subjectsolid state physicsru
dc.subjectnano-patternsru
dc.subjectRF magnetron sputteringru
dc.subjectthin filmsru
dc.subjectsolar cellsru
dc.subjectatomic force microscopyru
dc.titleRF-Magnetron sputtering of Si3N4 and study of Si3N4/p-Si heterostructuresru
dc.typeArticleru
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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