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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/61083
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dc.contributor.authorSyshchenko, V. V.-
dc.contributor.authorTarnovsky, A. I.-
dc.contributor.authorDronik, V. I.-
dc.contributor.authorIsupov, A. Yu.-
dc.date.accessioned2024-03-11T13:31:20Z-
dc.date.available2024-03-11T13:31:20Z-
dc.date.issued2023-
dc.identifier.citationOn the effect of quantum tunneling on the energy spectrum of the transverse motion of channeled positrons in a silicon crystal / V.V. Syshchenko, A. I. Tarnovsky, V.I. Dronik, Isupov A.Yu. // Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. - 2023. - Vol.17, №3.-P. 707-711.ru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/61083-
dc.description.abstractThe movement of charged particles in a crystal can be both regular and chaotic. At the quantum level, chaos manifests itself in the statistical properties of the set of energy levels. Systems, in which regions of regular motion are separated in the phase space by a region of dynamic chaos, are of particular interestru
dc.language.isoenru
dc.subjectphysicsru
dc.subjectelectricityru
dc.subjectregular dynamicsru
dc.subjectchaotic dynamicsru
dc.subjectquantum chaosru
dc.subjectchannelingru
dc.subjectsemiclassical approximationru
dc.subjectlevel spacing statisticsru
dc.subjectBerry-Robnik distributionru
dc.subjectdynamical tunnelingru
dc.titleOn the effect of quantum tunneling on the energy spectrum of the transverse motion of channeled positrons in a silicon crystalru
dc.typeArticleru
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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