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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/58143
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dc.contributor.authorMohebbifar, M. R.-
dc.contributor.authorGainutdinov, R. Kh.-
dc.contributor.authorKhamadeev, M. A.-
dc.date.accessioned2023-12-05T07:21:49Z-
dc.date.available2023-12-05T07:21:49Z-
dc.date.issued2015-
dc.identifier.citationMohebbifar, M.R. The shift of Energy levels of a quantum dot in single electron transistor / M.R. Mohebbifar, R.Kh. Gainutdinov, M.A. Khamadeev ; Optics and Nanophotonics Department, Institute of Physics, Kazan Federal University // Научные ведомости БелГУ. Сер. Математика. Физика. - 2015. - №23(220), вып.41.-С. 56-61. - Refer.: p. 60-61.ru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/58143-
dc.description.abstractThe shift of Energy levels of a quantum dot in single electron transistor model is investigated. The self-energy function which related to shift of Energy levels, describing this interaction is added to a bare energy of a dot state. In the standard way of determining the self-interaction corrections to bare energies of quantum dots, the variations of the self-energy functions with energy are ignored, and these corrections are considered to be equal to the values of the self-energy functions for bare energies of statesru
dc.language.isoengru
dc.subjectphysicsru
dc.subjectquantum mechanicru
dc.subjectsingle electron transistorru
dc.subjectenergy shiftru
dc.subjectself-energy junctionru
dc.subjectgeneralized dynamical equationru
dc.titleThe shift of Energy levels of a quantum dot in single electron transistorru
dc.typeArticleru
Appears in Collections:№ 23 (220), вып. 41

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