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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/52655
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dc.contributor.authorSyshchenko, V. V.-
dc.contributor.authorTarnovsky, A. I.-
dc.contributor.authorDronik, V. I.-
dc.contributor.authorIsupov, A. Yu.-
dc.date.accessioned2023-04-07T13:17:48Z-
dc.date.available2023-04-07T13:17:48Z-
dc.date.issued2022-
dc.identifier.citationSplitting of the transverse-motion energy levels of positrons during channeling in the [100] direction of a silicon crystal / V.V. Syshchenko [et al.] // Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. - 2022. - Vol.16, №2.-P. 263-270. - Doi: 10.1134/S1027451022020203. - Refer.: p. 270.ru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/52655-
dc.description.abstractThe motion of charged particles in the crystal can be both regular and chaotic. Within the quantum approach, chaos manifests itself in the statistical properties of the set of energy levelsru
dc.language.isoenru
dc.subjectphysicsru
dc.subjectstatistical physicsru
dc.subjectregular dynamicsru
dc.subjectchaotic dynamicsru
dc.subjectquantum chaosru
dc.subjectchannelingru
dc.subjectsemiclassical approximationru
dc.subjectlevel-spacing statisticsru
dc.subjectBerry-Robnik distributionru
dc.subjectdynamical tunnelingru
dc.subjectchaos-assisted tunnelingru
dc.titleSplitting of the transverse-motion energy levels of positrons during channeling in the [100] direction of a silicon crystalru
dc.typeArticleru
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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