Quasi-localized states and resonance scattering of particles by defects in semiconductor crystals with band spectrum structure

Abstract

The interaction of particles with planar defects in semiconductor crystal was studied on the basis of a model of the band energy-spectrum structure. Generalized localized states are shown to exist in the vicinity of defects. It is also shown that nonquadratic dispersion law gives rise to quasi-localized states. Particle scattering by the semiconductor boundary was analyzed. The condition for the total reflection from the interface is formulated as follows: the incident-particle energy should be equal to the energy of a quasi-localized state. It was found that a weak dissipation of particle energy in the crystal causes instability of the resonance condition for the total reflection