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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/32545
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dc.contributor.authorIvashchuk, O. O.-
dc.contributor.authorShchagin, A. V.-
dc.contributor.authorKubankin, A. S.-
dc.contributor.authorIonidi, V. Yu.-
dc.contributor.authorChepurnov, A. S.-
dc.date.accessioned2020-06-23T11:01:46Z-
dc.date.available2020-06-23T11:01:46Z-
dc.date.issued2019-
dc.identifier.citationSemiconductor driver of pyroelectric accelerator of charged particles / O.O. Ivashchuk, A.V. Shchagin, A.S. Kubankin [et al.] // Вопросы атомной науки и техники. - 2019. - №6(124).-P. 81-84.ru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/32545-
dc.description.abstractThe possibility for application of semiconductor element for heating of pyroelectric crystalin a pyroelectric accelerator of charged particles or pyroelectric X-ray generator is at first proposed and demonstrated experimentally. Spectra of X-ray radiation measured at the heating of the pyroelectric crystal LiNbO3 by silicon diode at different pressures of residual gas are presentedru
dc.language.isoenru
dc.subjectphysicsru
dc.subjectopticsru
dc.subjectX-ray radiationru
dc.subjectsemiconductor driverru
dc.subjectcharged particlesru
dc.subjectpyroelectric acceleratorru
dc.subjectpyroelectric crystalinru
dc.titleSemiconductor driver of pyroelectric accelerator of charged particlesru
dc.typeArticleru
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