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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/30412
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dc.contributor.authorIvanov, O.-
dc.contributor.authorYaprintsev, M.-
dc.contributor.authorDanshina, E.-
dc.date.accessioned2020-05-22T20:15:09Z-
dc.date.available2020-05-22T20:15:09Z-
dc.date.issued2018-
dc.identifier.citationIvanov, O. Electric field effect on variable-range hopping conductivity in Bi1.9Lu0.1Te3 / O. Ivanov, M. Yaprintsev, E. Danshina // Physica B: Condensed Matter. - 2018. - Vol.545. - P. 222-227.ru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/30412-
dc.description.abstractElectric field effect on low-temperature electrical resistivity of n-type Bi1.9Lu0.1Te3 was examined and analyzed. It was found that with decreasing temperature from 35 down to 2.5 K, the conductivity mechanism changes from metal type to semiconductor one resulting in appearance of minimum in the specific electrical resistivity, ρru
dc.language.isoenru
dc.subjectphysicsru
dc.subjectvariable-range hopping conductivityru
dc.subjectaverage hopping distanceru
dc.subjectelectric field activationru
dc.subjectdensity of stateru
dc.titleElectric field effect on variable-range hopping conductivity in Bi1.9Lu0.1Te3ru
dc.typeArticleru
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