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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/16964
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dc.contributor.authorMohebbifar, M. R.-
dc.contributor.authorGainutdinov, R. Kh.-
dc.contributor.authorKhamadeev, M. A.-
dc.date.accessioned2016-09-02T08:23:41Z-
dc.date.available2016-09-02T08:23:41Z-
dc.date.issued2015-
dc.identifier.citationMohebbifar, M. R. The shift of Energy levels of a quantum dot in single electron transistor / M. R. Mohebbifar, R. Kh. Gainutdinov, M. A. Khamadeev // Научные ведомости БелГУ. Сер. Математика. Физика. - 2015. - №23(220), вып.41.-С. 56-61. - Refer.: p. 60-61.ru
dc.identifier.urihttp://dspace.bsu.edu.ru/handle/123456789/16964-
dc.description.abstractThe shift of Energy levels of a quantum dot in single electron transistor model is investigated. The self-energy function which related to shift of Energy levels, describing this interaction is added to a bare energy of a dot state. In the standard way of determining the self-interaction corrections to bare energies of quantum dots, the variations of the self-energy functions with energy are ignored, and these corrections are considered to be equal to the values of the self-energy functions for bare energies of statesru
dc.language.isoenru
dc.subjectphysicsru
dc.subjectquantum mechanicru
dc.subjectsingle electron transistorru
dc.subjectenergy shiftru
dc.subjectself-energy junctionru
dc.subjectgeneralized dynamical equationru
dc.titleThe shift of Energy levels of a quantum dot in single electron transistorru
dc.typeArticleru
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